YS/T 985-2014
Polished reclaimed silicon wafers (English Version)

Standard No.
YS/T 985-2014
Language
Chinese, Available in English version
Release Date
2014
Published By
Professional Standard - Non-ferrous Metal
Latest
YS/T 985-2014
Scope
This standard specifies the requirements, inspection methods, inspection rules, marking, packaging, transportation, storage, quality certificate and order form (or contract) content for silicon polished recycled flakes. This standard applies to silicon recycling wafers (mainly including 100 mm, 125 mm, 150 mm and 200 mm single-sided or double-sided polished silicon wafers, unpolished silicon wafers or epitaxial silicon wafers) provided by users or sourced from third parties. Silicon polished wafer prepared by surface polishing. Products are mainly used for monitoring films in machinery, furnace processing, particle and photolithography. In addition, users need to pay attention to the thermal history, body contamination and surface deposits of the silicon recycling sheets.

YS/T 985-2014 Referenced Document

  • GB/T 11073 Standard method for measuring radial resistivity variation on silicon slices
  • GB/T 12962 Silicon single crystal*2017-01-01 Update
  • GB/T 12964 Monocrystalline silicon polished wafers*2018-09-17 Update
  • GB/T 13387 Test method for measuring flat length wafers of silicon and other electronic materials
  • GB/T 13388 Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques
  • GB/T 14140 Test method for measuring diameter of semiconductor wafer
  • GB/T 14144 Testing method for determination of radial interstitial oxygen variation in silicon
  • GB/T 14264 Semiconductor materials-Terms and definitions
  • GB/T 14844 Designations of semiconductor materials*2018-12-28 Update
  • GB/T 1550 Test methods for conductivity type of extrinsic semiconducting materials*2018-12-28 Update
  • GB/T 1554 Testing method for crystallographic perfection of silicon by preferential etch techniques
  • GB/T 1555 Method for Determination of Crystalline Orientation of Semiconductor Single Crystal*2023-08-06 Update
  • GB/T 1557 Test method for determining interstitial oxygen content in silicon by infrared absorption*2018-09-17 Update
  • GB/T 1558 Infrared absorption test method for substituted carbon content in silicon*2023-12-28 Update
  • GB/T 19921 Test method for particles on polished silicon wafer surfaces*2018-12-28 Update
  • GB/T 19922 Standard test methods for measuring site flatness on silicon wafers by noncontact scanning
  • GB/T 2828.1 Inspection procedure by count sampling part 1: Lot by lot inspection sampling plan retrieved by acceptance quality limit (AQL)
  • GB/T 4058 Test method for detection of oxidation induced defects in polished silicon wafers
  • GB/T 6616 Non-contact eddy current method for testing semiconductor wafer resistivity and semiconductor film sheet resistance*2023-08-06 Update
  • GB/T 6618 Test method for thickness and total thickness variation of silicon slices
  • GB/T 6619 Test method for bow of silicon wafers
  • GB/T 6620 Test method for measuring warp on silicon slices by noncontact scanning
  • GB/T 6621 Testing methods for surface flatness of silicon slices
  • GB/T 6624 Standard method for measuring the surface quality of polished silicon slices by visual inspection

YS/T 985-2014 history




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