GB/T 6619-2009
Test method for bow of silicon wafers (English Version)
- Standard No.
- GB/T 6619-2009
- Language
- Chinese, Available in English version
- Release Date
- 2009
- Published By
- General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
- Latest
- GB/T 6619-2009
- Replace
- GB/T 6619-1995
- Scope
- This standard specifies the contact measurement method for the curvature of silicon single crystal slices, grinding slices and polishing slices. This standard is applicable to the measurement of the curvature of circular silicon wafers with a diameter not less than 25 mm, a thickness not less than 180 μm, and a diameter-to-thickness ratio not greater than 250. The purpose of this test method is for incoming material acceptance and process control. This standard is also applicable to the measurement of curvature of other semiconductor wafers.
GB/T 6619-2009 Referenced Document
- GB/T 14264 Semiconductor materials-Terms and definitions
- GB/T 2828.1 Inspection procedure by count sampling part 1: Lot by lot inspection sampling plan retrieved by acceptance quality limit (AQL)*， 2013-02-15 Update
GB/T 6619-2009 history
- 2009 GB/T 6619-2009 Test method for bow of silicon wafers
- 1995 GB/T 6619-1995 Test methods for bow of silicon slices
