GB/T 13388-2009
Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques (English Version)

Standard No.

GB/T 13388-2009

Language

Chinese, Available in English version

Release Date

2009

Published By

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China

Latest

GB/T 13388-2009

Replace

GB/T 13388-1992

Scope

This standard specifies the measurement method of angle a, which is the angle between the crystal direction perpendicular to the reference plane of the circular silicon wafer and the reference plane of the silicon wafer surface. This standard is applicable to the reference plane length range of silicon wafers, which shall comply with the provisions in GB/T 12964 and GB/T 12965, and the angle deviation of silicon wafers shall be within the range of -5º to +5º. The accuracy of crystal orientation determined by this standard is directly dependent on the accuracy of matching of the reference surface to the datum baffle and the orientation accuracy of the baffle to the relative x-rays. This standard contains the following two test methods: Test method 1 - X-ray edge diffraction method Test method 2 - Laue back reflection X-ray method Test method 1 is non-destructive, in order to make the silicon wafer unique relative to the X-ray goniometer Positioning is similar to GB/T 1555 Test Method 1 except for the use of special wafer fixtures. Compared with the Laue back reflection method, this technique can measure the crystal orientation of the reference surface with higher accuracy. Method 2 is also non-destructive, and is similar to ASTM E82 and DIN 50433 test methods part 3, except that "instantaneous" negatives and special fixtures are used in order to position the reference plane relative to the X-ray beam. Although Method 2 is simpler and faster, it does not have the precision of Method 1 because it uses less accurate and less expensive instruments and fixtures. Method 2 provides a permanent negative record of the measurements. Note: Interpretation of the Laue photo can yield information on wafer misorientation. However this is outside the scope of the test method. Users willing to make this interpretation are referred to ASTM E82 and DIN50433 Test Methods Part 3 or standard X-ray textbooks. Since different fixtures can be used, method 2 is also suitable for the determination of the surface orientation of silicon wafers. Values in this standard are in metric units. Values in imperial units are given in parentheses for information only. Note: This standard does not involve safety issues, even if it is related to the use of the standard. It is the responsibility of the user of the standard to establish appropriate safety and security measures and to determine the scope of the rules and regulations prior to use of the standard.

GB/T 13388-2009 Referenced Document

• ASTM E82 Standard Test Method for Determining the Orientation of a Metal Crystal
• GB/T 12964 Monocrystalline silicon polished wafers*， 2018-09-17 Update
• GB/T 12965 Monocrystalline silicon as cut wafers and lapped wafers*， 2018-09-17 Update
• GB/T 14264 Semiconductor materials-Terms and definitions
• GB/T 1555 Method for Determination of Crystalline Orientation of Semiconductor Single Crystal*， 2023-08-06 Update
• GB/T 2828.1 Inspection procedure by count sampling part 1: Lot by lot inspection sampling plan retrieved by acceptance quality limit (AQL)*， 2013-02-15 Update

GB/T 13388-2009 history

• 2009 GB/T 13388-2009 Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques
• 1992 GB/T 13388-1992 Method for measuring crystallographic orientation of flats on single crystal sillcon slices and wafers by X-ray techniques