GB/T 4058-2009
Test method for detection of oxidation induced defects in polished silicon wafers (English Version)

Standard No.

GB/T 4058-2009

Language

Chinese, Available in English version

Release Date

2009

Published By

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China

Latest

GB/T 4058-2009

Replace

GB/T 4058-1995

Scope

This standard specifies the inspection method for silicon polishing oxide embroidery defects. This standard applies to the detection of embroidered or enhanced crystal defects in the surface area of silicon polished wafers in the simulated device oxidation process. This method can also be referred to for the inspection of silicon single crystal oxide embroidery defects.

GB/T 4058-2009 Referenced Document

• GB/T 14264 Semiconductor materials-Terms and definitions
• GB/T 1554 Testing method for crystallographic perfection of silicon by preferential etch techniques
• YS/T 209 In-situ defect map of silicon materials

GB/T 4058-2009 history

• 2009 GB/T 4058-2009 Test method for detection of oxidation induced defects in polished silicon wafers
• 1995 GB/T 4058-1995 Test method for detection of oxidation induced defects in polished silicon wafers