GB/T 6620-2009 (English Version) PDF

Standard No.: GB/T 6620-2009
Language: Chinese, Available in English version
Release Date: 2009
Published By: General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
Latest: GB/T 6620-2009
Replace: GB/T 6620-1995

Scope: This standard specifies the non-contact test method for the warpage of silicon single crystal cutting discs, grinding discs and polishing discs. This standard applies to the measurement of circular silicon wafers with a diameter greater than 50 mm and a thickness greater than 180 μm. This standard is also suitable for measuring the warpage of other semiconductor wafers. The purpose of this test method is for incoming material acceptance or process control. This test method is also suitable for monitoring the thermochemical effects of wafer warpage during device processing.

GB/T 6620-2009 Referenced Document

GB/T 14264 Semiconductor materials-Terms and definitions
GB/T 2828.1 Inspection procedure by count sampling part 1: Lot by lot inspection sampling plan retrieved by acceptance quality limit (AQL)*， 2013-02-15 Update
GB/T 6618 Test method for thickness and total thickness variation of silicon slices

2009 GB/T 6620-2009 Test method for measuring warp on silicon slices by noncontact scanning
1995 GB/T 6620-1995 Test method for measuring warp on silicon slices by nontact scanning