GB/T 11073-2007
Standard method for measuring radial resistivity variation on silicon slices (English Version)

Standard No.

GB/T 11073-2007

Language

Chinese, Available in English version

Release Date

2007

Published By

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China

Latest

GB/T 11073-2007

Replace

GB/T 11073-1989

Scope

This standard specifies the method for measuring the radial resistivity change of a silicon single wafer by the in-line four-probe method. This standard applies to the measurement of the radial resistivity change of silicon single wafers with a thickness smaller than the average probe spacing, a diameter greater than 15 mm, and a resistivity of 1X10¯³Ω·cm～3×10³Ω·cm.

GB/T 11073-2007 Referenced Document

• GB/T 12965 Monocrystalline silicon as cut wafers and lapped wafers*， 2018-09-17 Update
• GB/T 1552 Test method for measuring resistivity of monocrystal silicon and germanium with a collinear four-probe array
• GB/T 2828 Batch-by-batch inspection counting sampling procedure and sampling table (applicable to continuous batch inspection)
• GB/T 6618-1995 Test method for thickness and total thickness variation of silicon slices

GB/T 11073-2007 history

• 2007 GB/T 11073-2007 Standard method for measuring radial resistivity variation on silicon slices
• 1989 GB/T 11073-1989 Standard method for measuring radial resistivity variation on silicon slices