GB/T 14144-2009 (English Version) PDF

Standard No.: GB/T 14144-2009
Language: Chinese, Available in English version
Release Date: 2009
Published By: General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
Latest: GB/T 14144-2009
Replace: GB/T 14144-1993

Scope: This standard uses infrared spectroscopy to determine the radial variation of interstitial oxygen content in silicon crystals. This standard requires the use of anaerobic reference samples and a set of certified standards for calibrating equipment. This standard applies to the measurement of interstitial oxygen content in n-type silicon single crystals with room temperature resistivity greater than 0.1Ω•cm and p-type silicon single crystals with room temperature resistivity greater than 0.5Ω•cm. The effective range of this standard for measuring oxygen content is from 1×10 at·cm to the maximum solid solubility of interstitial oxygen in silicon crystals.

GB/T 14144-2009 Referenced Document

GB/T 14264-2009 Semiconductor materials-Terms and definitions
GB/T 1557-2006 The method of determining interstitial oxygen content in silicon by infrared absorption

2009 GB/T 14144-2009 Testing method for determination of radial interstitial oxygen variation in silicon
1993 GB/T 14144-1993 Test method for determination of radial interstitial oxygen variation in silicon