This standard specifies the method for measuring the flatness of silicon polished wafers with capacitive displacement sensors. Cutting wafers, grinding wafers, and corrosion wafers can also refer to this method. This standard is suitable for measuring the surface flatness of silicon polished wafers with standard diameters of 76mm, 100mm, 125mm, 150mm, 200mm, resistivity not greater than 200Ω•cm and thickness not greater than 1000μm and visually describing the contour of the silicon wafer surface.
GB/T 6621-2009 history
2009GB/T 6621-2009 Testing methods for surface flatness of silicon slices
1995GB/T 6621-1995 Test methods for surface flatness of silicon polished slices