GB/T 6621-2009
Testing methods for surface flatness of silicon slices (English Version)

Standard No.
GB/T 6621-2009
Language
Chinese, Available in English version
Release Date
2009
Published By
General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
Latest
GB/T 6621-2009
Replace
GB/T 6621-1995
Scope
This standard specifies the method for measuring the flatness of silicon polished wafers with capacitive displacement sensors. Cutting wafers, grinding wafers, and corrosion wafers can also refer to this method. This standard is suitable for measuring the surface flatness of silicon polished wafers with standard diameters of 76mm, 100mm, 125mm, 150mm, 200mm, resistivity not greater than 200Ω•cm and thickness not greater than 1000μm and visually describing the contour of the silicon wafer surface.

GB/T 6621-2009 history

  • 2009 GB/T 6621-2009 Testing methods for surface flatness of silicon slices
  • 1995 GB/T 6621-1995 Test methods for surface flatness of silicon polished slices
Testing methods for surface flatness of silicon slices



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