GB/T 6618-2009 (English Version) PDF

Standard No.: GB/T 6618-2009
Language: Chinese, Available in English version
Release Date: 2009
Published By: General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
Latest: GB/T 6618-2009
Replace: GB/T 6618-1995

Scope: This standard specifies the discrete and scanning measurement methods for the thickness and total thickness variation of silicon single crystal slices, lapped slices, polished slices and epitaxial wafers (silicon wafers for short). This standard applies to the measurement of the thickness and total thickness variation of silicon wafers conforming to the dimensions specified in GB/T 12964, GB/T 12965, and GB/T 14139. This standard can also be used to measure the thickness and total thickness variation of silicon wafers with other specifications if the test equipment allows it.

GB/T 6618-2009 Referenced Document

GB/T 12964 Monocrystalline silicon polished wafers*， 2018-09-17 Update
GB/T 12965 Monocrystalline silicon as cut wafers and lapped wafers*， 2018-09-17 Update
GB/T 14139 Silicon epitaxial wafers*， 2019-06-04 Update
GB/T 2828.1 Inspection procedure by count sampling part 1: Lot by lot inspection sampling plan retrieved by acceptance quality limit (AQL)*， 2013-02-15 Update

2009 GB/T 6618-2009 Test method for thickness and total thickness variation of silicon slices
1995 GB/T 6618-1995 Test method for thickness and total thickness variation of silicon slices