GB/T 26065-2010
Specification for polished test silicon wafers (English Version)

Standard No.

GB/T 26065-2010

Language

Chinese, Available in English version

Release Date

2011

Published By

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China

Latest

GB/T 26065-2010

Scope

1. This standard specifies the technical requirements for silicon single crystal test pieces used for inspection and process control in the manufacture of semiconductor devices. 2. This standard covers characteristic requirements such as size specifications, crystal orientation and surface defects. This standard involves the technical requirements for silicon polished test pieces of all standard diameters from 50.8mm to 300mm. 3. For the specifications of silicon single crystal polished wafers with higher requirements, such as: silicon wafers for particle testing, silicon wafers for photolithography resolution tests, and metal ion monitoring wafers, etc., refer to SEMI24 "Specifications for High Quality Polished Silicon Single Crystal Wafers".

GB/T 26065-2010 Referenced Document

• ASTM F1526 
• GB/T 11073 Standard method for measuring radial resistivity variation on silicon slices
• GB/T 12964 Monocrystalline silicon polished wafers*， 2018-09-17 Update
• GB/T 13387 Test method for measuring flat length wafers of silicon and other electronic materials
• GB/T 13388 Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques
• GB/T 14140 Test method for measuring diameter of semiconductor wafer
• GB/T 14264 Semiconductor materials-Terms and definitions
• GB/T 1550 Test methods for conductivity type of extrinsic semiconducting materials*， 2018-12-28 Update
• GB/T 1554 Testing method for crystallographic perfection of silicon by preferential etch techniques
• GB/T 1555 Method for Determination of Crystalline Orientation of Semiconductor Single Crystal*， 2023-08-06 Update
• GB/T 1557 Test method for determining interstitial oxygen content in silicon by infrared absorption*， 2018-09-17 Update
• GB/T 2828.1 Inspection procedure by count sampling part 1: Lot by lot inspection sampling plan retrieved by acceptance quality limit (AQL)*， 2013-02-15 Update
• GB/T 4058 Test method for detection of oxidation induced defects in polished silicon wafers
• GB/T 6616 Non-contact eddy current method for testing semiconductor wafer resistivity and semiconductor film sheet resistance*， 2023-08-06 Update
• GB/T 6618 Test method for thickness and total thickness variation of silicon slices
• GB/T 6619 Test method for bow of silicon wafers
• GB/T 6620 Test method for measuring warp on silicon slices by noncontact scanning
• GB/T 6621 Testing methods for surface flatness of silicon slices
• GB/T 6624 Standard method for measuring the surface quality of polished silicon slices by visual inspection
• YS/T 26 Silicon wafer edge contour inspection method*， 2016-07-11 Update

GB/T 26065-2010 history

• 2011 GB/T 26065-2010 Specification for polished test silicon wafers