GB/T 12963-2014
Electronic-grade polycrystalline silicon (English Version)
- Standard No.
- GB/T 12963-2014
- Language
- Chinese, Available in English version
- Release Date
- 2014
- Published By
- General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
- Status
- 2023-07
- Replace By
- GB/T 12963-2022
- Latest
- GB/T 12963-2022
- Replace
- GB/T 12963-2009
- Scope
- This standard specifies the requirements, test methods, inspection rules, marking, packaging, transportation, storage, quality certificates and purchase orders (or contracts) for polysilicon. This standard applies to polysilicon made from chlorosilane and silane.
GB/T 12963-2014 Referenced Document
- GB/T 13389 Practice for conversion between resistivity and dopant density for boron-doped, phosphorus-doped, and arsenic-doped silicon
- GB/T 14264 Semiconductor materials-Terms and definitions
- GB/T 1550 Test methods for conductivity type of extrinsic semiconducting materials*， 2018-12-28 Update
- GB/T 1551 Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method*， 2021-05-21 Update
- GB/T 1553 Determination of Minority Carrier Lifetime in Silicon and Germanium by Photoconductivity Decay Method*， 2023-08-06 Update
- GB/T 1557 Test method for determining interstitial oxygen content in silicon by infrared absorption*， 2018-09-17 Update
- GB/T 1558 Infrared absorption test method for substituted carbon content in silicon*， 2023-12-28 Update
- GB/T 24574 Test methods for photolumininescence analysis of single crystal silicon for Ⅲ-Ⅴ impurities
- GB/T 24581 Test method for Ⅲ and Ⅴ impurities content in single crystal silicon—Low temperature FT-IR analysis method*， 2022-03-09 Update
- GB/T 24582 Determination of metal impurity content on polysilicon surface by acid leaching-inductively coupled plasma mass spectrometry*， 2023-08-06 Update
- GB/T 4059 Test method for phosphorus content in polycrystalline silicon by zone-melting method under controlled atmosphere*， 2018-12-28 Update
- GB/T 4060 Test method for boron content in polycrystalline silicon by vacuum zone-melting method*， 2018-09-17 Update
- GB/T 4061 Polycrystalline silicon-examination method-assessment of sandwiches on cross-section by chemical corrosion
GB/T 12963-2014 history
- 2022 GB/T 12963-2022 Electronic-grade polycrystalline silicon
- 2014 GB/T 12963-2014 Electronic-grade polycrystalline silicon
- 2009 GB/T 12963-2009 Specification for polycrystalline silicon
- 1996 GB/T 12963-1996 Polycrystalline silicon
