GB/T 13389-2014 (English Version) PDF

Standard No.: GB/T 13389-2014
Language: Chinese, Available in English version
Release Date: 2014
Published By: General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
Latest: GB/T 13389-2014
Replace: GB/T 13389-1992

Scope: This standard specifies the conversion relationship between the resistivity of boron-doped, phosphorus-doped and arsenic-doped silicon single crystals and the dopant concentration. , other dopants similar to phosphorus. This standard is applicable to boron doping concentration 10¹⁴ cm^-3~1×10²⁰ cm^-3, phosphorus doping concentration 3×10¹³ cm< superscript-3>~1×10²⁰ cm^-3, arsenic-doped concentration 10¹⁹ cm^-3~6×10²⁰ cm. For boron-doped and phosphorus-doped silicon single crystal dopant concentration can be extended to 10¹² cm^-3. This standard can also be used for the conversion of silicon single crystal resistivity to carrier concentration at 23 ℃, but does not include the conversion of carrier concentration of arsenic dopants, or any other conversion of carrier concentration.

GB/T 13389-2014 Referenced Document

GB/T 14264 Semiconductor materials-Terms and definitions
GB/T 1550 Test methods for conductivity type of extrinsic semiconducting materials*， 2018-12-28 Update
GB/T 1551 Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method*， 2021-05-21 Update
GB/T 4326 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient

2014 GB/T 13389-2014 Practice for conversion between resistivity and dopant density for boron-doped, phosphorus-doped, and arsenic-doped silicon
1992 GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon