GB/T 12963-2009
Specification for polycrystalline silicon (English Version)
- Standard No.
- GB/T 12963-2009
- Language
- Chinese, Available in English version
- Release Date
- 2009
- Published By
- General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
- Status
- 2015-09
- Replace By
- GB/T 12963-2014
- Latest
- GB/T 12963-2022
- Replace
- GB/T 12963-1996
- Scope
- This standard specifies the product classification, technical requirements, test methods, inspection rules, signs, packaging, transportation and storage of silicon polycrystalline. This standard is applicable to polycrystalline silicon obtained by hydrogen reduction of trichlorosilane or silicon tetrachloride.
GB/T 12963-2009 Referenced Document
- ASTM F1723-02
- GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
- GB/T 14264-2009 Semiconductor materials-Terms and definitions
- GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials
- GB/T 1553-2009 Test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconduetivity decay
- GB/T 1558-2009 Test method for substitutional atomic carbon concent of silicon by infrared absorption
- GB/T 4059-2007 Polycrystalline silicon.Examination method.Zone-melting on Phosphorus under controlled atmosphere
- GB/T 4060-2007 Polycrystalline silicon.Examination method.Vacuum zone-melting on boron
- GB/T 4061-2009 Polycrystalline silicon-examination method-assessment of sandwiches on cross-section by chemical corrosion
GB/T 12963-2009 history
- 2022 GB/T 12963-2022 Electronic-grade polycrystalline silicon
- 2014 GB/T 12963-2014 Electronic-grade polycrystalline silicon
- 2009 GB/T 12963-2009 Specification for polycrystalline silicon
- 1996 GB/T 12963-1996 Polycrystalline silicon
