GB/T 24581-2022
Test method for Ⅲ and Ⅴ impurities content in single crystal silicon—Low temperature FT-IR analysis method (English Version)
- Standard No.
- GB/T 24581-2022
- Language
- Chinese, Available in English version
- Release Date
- 2022
- Published By
- 国家市场监督管理总局、中国国家标准化管理委员会
- Latest
- GB/T 24581-2022
- Replace
- GB/T 24581-2009
- Scope
- This document describes a method for the determination of group III and V impurities in silicon single crystals by low temperature Fourier transform infrared spectroscopy. This document is applicable to the content of III and V group impurities aluminum (Al), antimony (Sb), arsenic (As), boron (B), gallium (Ga), indium (In) and phosphorus (P) in silicon single crystal Determination, the determination range of each element (in atomic number) is 1.0×1010cm-3 ~4.1×1014cm-3.
GB/T 24581-2022 Referenced Document
- GB/T 14264 Semiconductor materials-Terms and definitions
- GB/T 29057 Practice for evaluating polycrystalline silicon rods by zone fusion pulling and spectroscopic analysis*， 2023-08-06 Update
- GB/T 8322 Molecular absorption spectrometry.Terminology
GB/T 24581-2022 history
- 2022 GB/T 24581-2022 Test method for Ⅲ and Ⅴ impurities content in single crystal silicon—Low temperature FT-IR analysis method
- 2009 GB/T 24581-2009 Test method for low temperature FT-IR analysis of single crystal silicon for Ⅲ-Ⅴ impurities
