GB/T 12963-2022
Electronic-grade polycrystalline silicon (English Version)

Standard No.
GB/T 12963-2022
Language
Chinese, Available in English version
Release Date
2022
Published By
General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
Latest
GB/T 12963-2022
Replace
GB/T 12963-2014
Scope
This document specifies the grades and categories, technical requirements, test methods, inspection rules, signs, packaging, transportation, storage, accompanying documents and order forms of electronic grade polysilicon. This document applies to electronic grade polysilicon (hereinafter referred to as "polysilicon") made from chlorosilane and silane.

GB/T 12963-2022 Referenced Document

  • GB/T 14264 Semiconductor materials-Terms and definitions
  • GB/T 14844 Designations of semiconductor materials
  • GB/T 1550 Test methods for conductivity type of extrinsic semiconducting materials
  • GB/T 1551 Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method
  • GB/T 1553 Determination of Minority Carrier Lifetime in Silicon and Germanium by Photoconductivity Decay Method*， 2023-08-06 Update
  • GB/T 1557 Test method for determining interstitial oxygen content in silicon by infrared absorption
  • GB/T 1558 Infrared absorption test method for substituted carbon content in silicon*， 2023-12-28 Update
  • GB/T 24574 Test methods for photolumininescence analysis of single crystal silicon for Ⅲ-Ⅴ impurities
  • GB/T 24581 Test method for Ⅲ and Ⅴ impurities content in single crystal silicon—Low temperature FT-IR analysis method
  • GB/T 24582 Determination of metal impurity content on polysilicon surface by acid leaching-inductively coupled plasma mass spectrometry*， 2023-08-06 Update
  • GB/T 29057 Practice for evaluating polycrystalline silicon rods by zone fusion pulling and spectroscopic analysis*， 2023-08-06 Update
  • GB/T 35306 Determination of Carbon and Oxygen Content in Silicon Single Crystal Low Temperature Fourier Transform Infrared Spectroscopy*， 2023-08-06 Update
  • GB/T 37049 Test method for the content of metal impurity in electronic grade polysilicon—Inductively coupled-plasma mass spectrometry method
  • GB/T 4059 Test method for phosphorus content in polycrystalline silicon by zone-melting method under controlled atmosphere
  • GB/T 4060 Test method for boron content in polycrystalline silicon by vacuum zone-melting method
  • GB/T 4061 Polycrystalline silicon-examination method-assessment of sandwiches on cross-section by chemical corrosion

GB/T 12963-2022 history

Electronic-grade polycrystalline silicon


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