GB/T 1551-2021 (English Version) PDF

Scope: This document specifies the method for testing the resistivity of silicon single crystals by the in-line four-probe method and the direct current two-probe method. This document is applicable to the test of resistivity of silicon single crystal. The resistivity range of p-type silicon single crystal that can be tested by the in-line four-probe method is 7×10 Ω·cm~8×103 Ω·cm, n-type silicon single crystal The resistivity range is 7×10-4 Ω·cm~1.5×104 Ω·cm; the DC two-probe method is suitable for testing the resistivity of circular, square or rectangular silicon single crystals with uniform cross-sectional areas, and the test range is 1×104 Ω·cm. 10-3 Ω·cm~1×-4 104 Ω·cm, the ratio of the sample length to the largest dimension of the section is not less than 3:1. The test of silicon single crystal resistivity in other ranges can refer to this document.

GB/T 1551-2021 Referenced Document

GB/T 14264 Semiconductor materials-Terms and definitions
GB/T 1550 Test methods for conductivity type of extrinsic semiconducting materials

2021 GB/T 1551-2021 Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method
2009 GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicom
1995 GB/T 1551-1995 Test method for resistivity of silicon and germanium bars using a two-point probe