GB/T 29506-2013
300 mm polished monocrystalline silicon wafers (English Version)

Standard No.

GB/T 29506-2013

Language

Chinese, Available in English version

Release Date

2013

Published By

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China

Latest

GB/T 29506-2013

Scope

This standard specifies the terms and definitions, technical requirements, test methods, detection rules and signs of silicon single crystal polished wafers with a diameter of 300 mm, p-type, <100> crystal orientation, and a resistivity of 0.5 Ω·cm~20 Ω·cm. , packaging, transportation, storage, etc. This standard applies to silicon single crystal polished wafers prepared by double-sided polishing of Czochralski single crystal grinding wafers with a diameter of 300 mm. The product is mainly used for substrates meeting the technical requirements of integrated circuit ICs with a line width of 90 nm.

GB/T 29506-2013 Referenced Document

• GB/T 11073 Standard method for measuring radial resistivity variation on silicon slices
• GB/T 13388 Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques
• GB/T 14140 Test method for measuring diameter of semiconductor wafer
• GB/T 14264 Semiconductor materials-Terms and definitions
• GB/T 1550 Test methods for conductivity type of extrinsic semiconducting materials*， 2018-12-28 Update
• GB/T 1554 Testing method for crystallographic perfection of silicon by preferential etch techniques
• GB/T 1555 Method for Determination of Crystalline Orientation of Semiconductor Single Crystal*， 2023-08-06 Update
• GB/T 1557 Test method for determining interstitial oxygen content in silicon by infrared absorption*， 2018-09-17 Update
• GB/T 1558 Infrared absorption test method for substituted carbon content in silicon*， 2023-12-28 Update
• GB/T 19921 Test method for particles on polished silicon wafer surfaces*， 2018-12-28 Update
• GB/T 19922 Standard test methods for measuring site flatness on silicon wafers by noncontact scanning
• GB/T 24578 Test method for measuring surface metal contamination on silicon wafers by total reflection X-Ray fluorescence spectroscopy*， 2015-12-10 Update
• GB/T 26067 Standard test method for dimensions of notches on silicon wafers
• GB/T 2828.1 Inspection procedure by count sampling part 1: Lot by lot inspection sampling plan retrieved by acceptance quality limit (AQL)
• GB/T 29504 300 mm monocrystalline silicon
• GB/T 29507 Test method for measuring flatness,thickness and total thickness variation on silicon wafers.Automated non-contact scanning
• GB/T 29508 300 mm monocrystalline silicon as cut slices and grinded slices
• GB/T 4058 Test method for detection of oxidation induced defects in polished silicon wafers
• GB/T 6616 Non-contact eddy current method for testing semiconductor wafer resistivity and semiconductor film sheet resistance*， 2023-08-06 Update
• GB/T 6624 Standard method for measuring the surface quality of polished silicon slices by visual inspection
• YS/T 26 Silicon wafer edge contour inspection method*， 2016-07-11 Update
• YS/T 679 Surface photovoltage method for measuring minority carrier diffusion length in extrinsic semiconductors*， 2018-10-22 Update

GB/T 29506-2013 history

• 2013 GB/T 29506-2013 300 mm polished monocrystalline silicon wafers