GB/T 13389-1992
Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon (English Version)
- Standard No.
- GB/T 13389-1992
- Language
- Chinese, Available in English version
- Release Date
- 1992
- Published By
- General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
- Status
- 2015-09
- Replace By
- GB/T 13389-2014
- Latest
- GB/T 13389-2014
- Scope
- This standard specifies the conversion method between boron-doped phosphorus-doped silicon single crystal resistivity and dopant concentration at 23°C. This standard applies to boron-doped silicon single crystals with a dopant concentration of 1012～1021cm-3 (resistivity 0.0001～10,000Ω·cm) and 1012 ～5×1020cm-3 (resistivity 0.0002～4,000Ω·cm) conversion of phosphorous-doped silicon single crystal resistivity and dopant concentration can also be extended to silicon activation Other dopants similar to boron and phosphorus.
GB/T 13389-1992 history
- 2014 GB/T 13389-2014 Practice for conversion between resistivity and dopant density for boron-doped, phosphorus-doped, and arsenic-doped silicon
- 1992 GB/T 13389-1992 Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
