GB/T 4059-2007 (English Version) PDF

Standard No.: GB/T 4059-2007
Language: Chinese, Available in English version
Release Date: 2007
Published By: General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
Status: Be replaced 2019-11
Replace By: GB/T 4059-2018
Latest: GB/T 4059-2018
Replace: GB/T 4059-1983

Scope: This standard applies to the inspection of polycrystalline silicon rod-based phosphorus deposited on silicon cores. The effective range of this standard to detect impurity concentration: 0.002×10～100×10.

GB/T 4059-2007 Referenced Document

GB/T 13389 Practice for conversion between resistivity and dopant density for boron-doped, phosphorus-doped, and arsenic-doped silicon*， 2014-12-31 Update
GB/T 14264 Semiconductor materials-Terms and definitions *， 2009-10-30 Update
GB/T 1551 Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method*， 2021-05-21 Update
GB/T 1553 Determination of Minority Carrier Lifetime in Silicon and Germanium by Photoconductivity Decay Method*， 2023-08-06 Update
GB/T 1554 Testing method for crystallographic perfection of silicon by preferential etch techniques*， 2009-10-30 Update
GB/T 1555 Method for Determination of Crystalline Orientation of Semiconductor Single Crystal*， 2023-08-06 Update

2018 GB/T 4059-2018 Test method for phosphorus content in polycrystalline silicon by zone-melting method under controlled atmosphere
2007 GB/T 4059-2007 Polycrystalline silicon.Examination method.Zone-melting on Phosphorus under controlled atmosphere
1983 GB/T 4059-1983 Polycrystalline silicon--Examination method--Zone-melting on phosphorus under controlled atmosphere