GB/T 1553-2009 (English Version) PDF

Standard No.: GB/T 1553-2009
Language: Chinese, Available in English version
Release Date: 2009
Published By: General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
Status: Be replaced 2024-03
Replace By: GB/T 1553-2023
Latest: GB/T 1553-2023
Replace: GB/T 1553-1997

Scope: This standard specifies the method for the determination of minority carrier lifetime in silicon and germanium single crystals. This standard applies to the measurement of the lifetime of non-equilibrium minority carriers in the process of carrier recombination in extrinsic silicon and germanium single crystals. This standard is the pulsed light method. This method does not destroy the intrinsic characteristics of the sample, and the sample can be tested repeatedly, but requires the sample to have a special bar size and submerged surface, see Table 1. The lowest measurable lifetime value of this standard is 10 μs, depending on the afterglow of the light source. Not suitable for acceptance testing of polished discs.

GB/T 1553-2009 Referenced Document

GB/T 14264-2009 Semiconductor materials-Terms and definitions
GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials
GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicom

2023 GB/T 1553-2023 Determination of Minority Carrier Lifetime in Silicon and Germanium by Photoconductivity Decay Method
2009 GB/T 1553-2009 Test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconduetivity decay
1997 GB/T 1553-1997 Standard test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconductivity decay