GB/T 30656-2014
Polished monocrystalline silicon carbide wafers (English Version)
- Standard No.
- GB/T 30656-2014
- Language
- Chinese, Available in English version
- Release Date
- 2014
- Published By
- General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
- Status
- 2023-10
- Replace By
- GB/T 30656-2023
- Latest
- GB/T 30656-2023
- Scope
- This standard specifies the requirements, inspection methods, inspection rules, marks, packaging, transportation, storage, quality certificates and purchase orders (or contracts) for 4H and 6H silicon carbide single crystal polished wafers. This standard applies to 4H and 6H silicon carbide single crystal polishing wafers prepared after single-side or double-side polishing. The products are mainly used to make epitaxial substrates for semiconductor lighting and power electronic devices.
GB/T 30656-2014 Referenced Document
- DIN 50448 Testing of materials for semiconductor technology - Contactless determination of the electrical resistivity of semi-insulating semi-conductor slices using a capacitive probe
- GB/T 13387 Test method for measuring flat length wafers of silicon and other electronic materials
- GB/T 13388 Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques
- GB/T 14140 Test method for measuring diameter of semiconductor wafer
- GB/T 14264 Semiconductor materials-Terms and definitions
- GB/T 1555 Method for Determination of Crystalline Orientation of Semiconductor Single Crystal*， 2023-08-06 Update
- GB/T 29505 Test method for measuring surface roughness on planar surfaces of silicon wafer
- GB/T 29507 Test method for measuring flatness,thickness and total thickness variation on silicon wafers.Automated non-contact scanning
- GB/T 31351 Nondestructive test method for micropipe density of polished monocrystalline silicon carbide wafers
- GB/T 6616 Non-contact eddy current method for testing semiconductor wafer resistivity and semiconductor film sheet resistance*， 2023-08-06 Update
- GB/T 6619 Test method for bow of silicon wafers
- GB/T 6620 Test method for measuring warp on silicon slices by noncontact scanning
- GB/T 6624 Standard method for measuring the surface quality of polished silicon slices by visual inspection
GB/T 30656-2014 history
- 2023 GB/T 30656-2023 Silicon carbide single crystal polished wafer
- 2014 GB/T 30656-2014 Polished monocrystalline silicon carbide wafers
