SJ/T 11396-2009 (English Version) PDF

Scope: This standard specifies the technical requirements, test methods, inspection and testing, marking, packaging, transportation and storage of high-purity sapphire single crystal polished substrates for epitaxial gallium nitride. This standard is applicable to the preparation of high-purity sapphire single crystal polished substrates for the epitaxial gallium nitride of semiconductor light-emitting diodes.

SJ/T 11396-2009 Referenced Document

GB/T 1031-1995 Surface ronghness parameters and their values
GB/T 14264-1993 Semiconductor materials-Terms and definitions
GB/T 1554-1995 Test method for crystallographic perfection of silicon by preferential etch techniques
GB/T 1555 Method for Determination of Crystalline Orientation of Semiconductor Single Crystal*， 2023-08-06 Update
GB/T 2828.1-2003 Sampling procedures for inspection by attributes--Part 1: Sampling schemes indexed by acceptance quality limit(AQL) for lot-by-lot inspection
GB/T 6618 Test method for thickness and total thickness variation of silicon slices
GB/T 6619 Test method for bow of silicon wafers
GB/T 6620 Test method for measuring warp on silicon slices by noncontact scanning
GB/T 6621 Testing methods for surface flatness of silicon slices
GB/T 6624 Standard method for measuring the surface quality of polished silicon slices by visual inspection
SJ 20744-1999 General rule of infrared absorption spectral analysis for the impurity concentration in semiconductor materials

2009 SJ/T 11396-2009 The sapphire substrates for nitride based light-emitting diode