YS/T 679-2008 (English Version) PDF

Scope: 1.1 This standard is applicable to the measurement of minority carrier diffusion length in extrinsic single crystal semiconductor material samples or homoepitaxial layers of known resistivity deposited on heavily doped substrates of the same conductivity type. The sample or epitaxial layer thickness is required to be greater than 4 times the diffusion length. 1.2 This standard was developed for the application of single crystal silicon samples and can be used to measure the effective diffusion length and evaluate the crystal quality on other semiconductors such as gallium arsenide (while adjusting the corresponding illumination wavelength (energy) range and sample preparation process). The effective diffusion length on a polysilicon sample with intergranular boundaries perpendicular to the surface. This standard can also be used to measure the width of the clean area of silicon wafers. 1.3 The application limits of this standard for sample resistivity and lifetime have not yet been determined, but it has been successfully tested on p- and n-type silicon samples with resistivity (0.l~50) Ω·cm and carrier lifetime as short as 2ns. Measurement. The diffusion length measured in this standard is only performed at room temperature of 22°C ± 0.5°C. Lifetime and diffusion length are functions of temperature.

YS/T 679-2008 Referenced Document

GB/T 11446.1 Electronic grade water*， 2013-12-31 Update
GB/T 14264 Semiconductor materials-Terms and definitions *， 2009-10-30 Update
GB/T 14847 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance*， 2011-01-10 Update
GB/T 1552 Test method for measuring resistivity of monocrystal silicon and germanium with a collinear four-probe array
GB/T 1553 Determination of Minority Carrier Lifetime in Silicon and Germanium by Photoconductivity Decay Method*， 2023-08-06 Update
GB/T 6616 Non-contact eddy current method for testing semiconductor wafer resistivity and semiconductor film sheet resistance*， 2023-08-06 Update
GB/T 6618 Test method for thickness and total thickness variation of silicon slices*， 2009-10-30 Update

2018 YS/T 679-2018 Surface photovoltage method for measuring minority carrier diffusion length in extrinsic semiconductors
2008 YS/T 679-2008 Test methods for minority carrier diffusion length in extrinsic semiconductors by measurement of steady-state surface photovoltage