GB/T 14847-2010 (English Version) PDF

Standard No.: GB/T 14847-2010
Language: Chinese, Available in English version
Release Date: 2011
Published By: General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
Latest: GB/T 14847-2010
Replace: GB/T 14847-1993

Scope: This standard specifies the infrared reflectance measurement method for the thickness of the lightly doped silicon epitaxial layer on the heavily doped substrate. This standard applies to the measurement of the thickness of n-type and p-type silicon epitaxial layers whose resistivity of the substrate is less than 0.02Ω·cm at 23°C and the resistivity of the epitaxial layer is greater than 0.1Ω·cm at 23°C and the thickness of the epitaxial layer is greater than 2μm; In terms of accuracy, this method is also suitable for testing the thickness of n-type and p-type epitaxial layers between 0.5 μm and 2 μm in principle.

GB/T 14847-2010 Referenced Document

GB/T 14264 Semiconductor materials-Terms and definitions
GB/T 1552 Test method for measuring resistivity of monocrystal silicon and germanium with a collinear four-probe array
GB/T 6379.2 Accuracy(trueness and precision)of measurement methods and results-Part 2:Basic method for the determination of repeatability and reproducibility of a standard measurement method

2011 GB/T 14847-2010 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance
1993 GB/T 14847-1993 Test method for thickness of lightly doped silicon eqitaxial layers on heavily doped silicon substrates by infrared reflectance