GB/T 1552-1995
Test method for measuring resistivity of monocrystal silicon and germanium with a collinear four-probe array (English Version)

Standard No.

GB/T 1552-1995

Language

Chinese, Available in English version

Release Date

1995

Published By

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China

Status

Be replaced 2010-06

Replace By

GB/T 1551-2009

Latest

GB/T 1551-2021

Scope

This standard specifies the method for measuring the resistivity of silicon and germanium single crystals with four in-line probes. This standard is applicable to the volume resistivity of silicon and germanium single crystals whose thickness and the shortest distance from the edge of the sample to any probe end point are both greater than 4 times the spacing between the control pins, and for which the diameter is greater than the spacing between the probes. 10 times the resistivity of silicon and germanium single wafers (referred to as wafers) whose thickness is less than 4 times the pin spacing. The measurement range is silicon: 1×10^-3～3×10³Ω·cm, germanium: 1×10^-3, 1×10²Ω·cm .

GB/T 1552-1995 history

• 2021 GB/T 1551-2021 Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method
• 2009 GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicom
• 1995 GB/T 1552-1995 Test method for measuring resistivity of monocrystal silicon and germanium with a collinear four-probe array

GB/T 1552-1995 Test method for measuring resistivity of monocrystal silicon and germanium with a collinear four-probe array was changed to GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicom.