GB/T 14146-2009 (English Version) PDF

Standard No.: GB/T 14146-2009
Language: Chinese, Available in English version
Release Date: 2009
Published By: General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
Status: Be replaced 2021-12
Replace By: GB/T 14146-2021
Latest: GB/T 14146-2021
Replace: GB/T 14146-1993

Scope: This standard specifies the mercury probe capacitance-voltage measurement method for the carrier concentration of the silicon epitaxial layer. This standard is applicable to the measurement of carrier concentration of homogeneous silicon epitaxial layer. Measuring range: 4×10cm～8×10cm. The thickness of the silicon epitaxial layer tested by this standard must be greater than the depth of depletion under the test bias. This standard is also applicable to the carrier concentration measurement of silicon polished wafers.

GB/T 14146-2009 Referenced Document

GB/T 14847-1993 Test method for thickness of lightly doped silicon eqitaxial layers on heavily doped silicon substrates by infrared reflectance
GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials
GB/T 1552-1995 Test method for measuring resistivity of monocrystal silicon and germanium with a collinear four-probe array

2021 GB/T 14146-2021 Test method for carrier concentration of silicon epitaxial layers—Capacitance-voltage method
2009 GB/T 14146-2009 Silicon epitaxial layers-determination of carrier concentration-mercury probe voltages-capacitance method
1993 GB/T 14146-1993 Silicon epitaxial layers--Determination of carrier concentration--Mercury probe Valtage-capacitance method