GB/T 14146-2021 (English Version) PDF

Scope: This document specifies the method for measuring the carrier concentration of the silicon epitaxial layer by the capacitance-voltage method, including the mercury probe capacitance-voltage method and the non-contact capacitance-voltage method. This document is applicable to the test of the carrier concentration of the homogeneous silicon epitaxial layer, the test range is 4×1013 cm-3 ~8×1016 cm-3, where the thickness of the silicon epitaxial layer is greater than two times the depth of the depletion layer under the test bias. times. The test of carrier concentration of polished silicon single crystal wafers and homogeneous silicon carbide epitaxial wafers can also refer to this document, and the non-contact capacitance-voltage method is not suitable for the test of carrier concentration of homogeneous silicon carbide epitaxial wafers.

GB/T 14146-2021 Referenced Document

GB/T 14264 Semiconductor materials-Terms and definitions
GB/T 14847 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance
GB/T 1550 Test methods for conductivity type of extrinsic semiconducting materials
GB/T 1551 Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method
GB/T 6624 Standard method for measuring the surface quality of polished silicon slices by visual inspection

2021 GB/T 14146-2021 Test method for carrier concentration of silicon epitaxial layers—Capacitance-voltage method
2009 GB/T 14146-2009 Silicon epitaxial layers-determination of carrier concentration-mercury probe voltages-capacitance method
1993 GB/T 14146-1993 Silicon epitaxial layers--Determination of carrier concentration--Mercury probe Valtage-capacitance method