GB/T 14847-1993
Test method for thickness of lightly doped silicon eqitaxial layers on heavily doped silicon substrates by infrared reflectance (English Version)
- Standard No.
- GB/T 14847-1993
- Language
- Chinese, Available in English version
- Release Date
- 1993
- Published By
- General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
- Status
- 2011-10
- Replace By
- GB/T 14847-2010
- Latest
- GB/T 14847-2010
- Scope
- This standard specifies the infrared reflectance measurement method for the thickness of lightly doped silicon epitaxial layer on heavily doped substrate. This standard is applicable to the measurement of the thickness of the silicon epitaxial layer whose room temperature resistivity of the substrate is less than 0.02Ω·cm and the room temperature resistivity of the epitaxial layer is greater than 0.1Ω·cm and the thickness of the epitaxial layer is greater than 2μm.
GB/T 14847-1993 history
- 2011 GB/T 14847-2010 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance
- 1993 GB/T 14847-1993 Test method for thickness of lightly doped silicon eqitaxial layers on heavily doped silicon substrates by infrared reflectance
