GB/T 14146-1993
Silicon epitaxial layers--Determination of carrier concentration--Mercury probe Valtage-capacitance method (English Version)

Standard No.

GB/T 14146-1993

Language

Chinese, Available in English version

Release Date

1993

Published By

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China

Status

Be replaced 2010-06

Replace By

GB/T 14146-2009

Latest

GB/T 14146-2021

Scope

This standard specifies the mercury probe capacitance-voltage measurement method for the carrier concentration of the silicon epitaxial layer. This standard is applicable to the measurement of carrier concentration of homogeneous silicon epitaxial layer. The measuring range is 10¹³～10¹⁸cm^-3.

GB/T 14146-1993 history

• 2021 GB/T 14146-2021 Test method for carrier concentration of silicon epitaxial layers—Capacitance-voltage method
• 2009 GB/T 14146-2009 Silicon epitaxial layers-determination of carrier concentration-mercury probe voltages-capacitance method
• 1993 GB/T 14146-1993 Silicon epitaxial layers--Determination of carrier concentration--Mercury probe Valtage-capacitance method