This standard specifies the product classification, technical requirements, test methods, etc. It is suitable for indium antimonide polycrystals prepared by zone melting method and indium antimonide polycrystals, single crystals and cut sheets prepared by Czochralski method for making infrared detectors and magnetic sensitive elements.
GB/T 11072-2009 Referenced Document
GB/T 11297.1 Test method for wavefront distortion of laser rods*, 2017-05-31 Update
GB/T 11297.10 Test method for curie temperature of pyroelectric materials*, 2015-12-31 Update
GB/T 11297.11 Test method for dielectric constant of pyroelectric materials*, 2015-12-31 Update
GB/T 11297.12 Test method for extinction ratio of optical crystal*, 2012-12-31 Update
GB/T 11297.2 Test method for side direction scattering coefficient of laser rods
GB/T 11297.3 Test method for extinction ratio of Nd:YAG laser rods
GB/T 11297.4 Test method for normal pulse lasing threshold and slope efficiency of Nd:YAG laser rods
GB/T 11297.5 Test method for continuous lasing threshold,slope efficiency and output power of Nd:YAG laser rods
GB/T 11297.6 Standard method for showing and measuring dislocation etch pits in Indium Antimonide single crystal
GB/T 11297.7 Test method for resistivity and Hall coefficient in InSb single crystals
GB/T 11297.8 Test method for pyroelectric coefficient of pyroelectric materials*, 2015-12-31 Update
GB/T 11297.9 Test method for dielectric tangent of loss angle of pyroelectric materials*, 2015-12-31 Update
GB/T 4326-2006 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient
GB/T 11072-2009 history
2009GB/T 11072-2009 Indium antimonide polycrystal,single crystals and as-cut slices
1989GB/T 11072-1989 Indium antimonide polycrystal, single crystals and as-cut slices