GB/T 11297.7-1989
Test method for resistivity and Hall coefficient in InSb single crystals (English Version)

Standard No.: GB/T 11297.7-1989
Language: Chinese, Available in English version
Release Date: 1989
Published By: General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
Latest: GB/T 11297.7-1989

Scope: This method is applicable to the measurement of resistivity and Hall coefficient of rectangular parallelepiped and thin indium antimonide single crystal samples. The sample used in this method is cut and prepared from an indium antimonide single crystal, and an electrode contact is applied at a specific position, and the resistivity and Hall coefficient of the sample are measured by a direct current method, and then the carrier concentration and the carrier coefficient of the sample are calculated. Flow rate. This method is applicable to indium antimonide single crystal samples with a resistivity of 10^-3～10²Ω·cm.

GB/T 11297.7-1989 history

1989 GB/T 11297.7-1989 Test method for resistivity and Hall coefficient in InSb single crystals