GB/T 11297.6-1989
Standard method for showing and measuring dislocation etch pits in Indium Antimonide single crystal (English Version)
- Standard No.
- GB/T 11297.6-1989
- Language
- Chinese, Available in English version
- Release Date
- 1989
- Published By
- General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
- Latest
- GB/T 11297.6-1989
- Scope
- The method adopts nitric acid-hydrofluoric acid etchant corrosion, and is suitable for displaying and measuring a dislocation of indium plane on indium antimonide original wafer (111). The deviation of the measurement surface from the (111) surface should not be greater than 3°.
GB/T 11297.6-1989 history
- 1989 GB/T 11297.6-1989 Standard method for showing and measuring dislocation etch pits in Indium Antimonide single crystal
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