This document specifies the brand name, technical requirements, test methods, inspection rules, marking, packaging, transportation, storage, accompanying documents and order form of indium phosphide single crystal. This document is applicable to the production of indium phosphide single crystal ingots and indium phosphide single crystal polished wafers for optoelectronic and microelectronic devices.
GB/T 20230-2022 Referenced Document
GB/T 13388 Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques
GB/T 14264 Semiconductor materials-Terms and definitions
GB/T 1555 Method for Determination of Crystalline Orientation of Semiconductor Single Crystal*, 2023-08-06 Update
GB/T 19921 Test method for particles on polished silicon wafer surfaces
GB/T 26067 Standard test method for dimensions of notches on silicon wafers
GB/T 2828.1-2012 Inspection procedure by count sampling part 1: Lot by lot inspection sampling plan retrieved by acceptance quality limit (AQL)
GB/T 32278 Test method for flatness of silicon carbide single wafer
GB/T 4326 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient
GB/T 6618 Test method for thickness and total thickness variation of silicon slices
GB/T 6624 Standard method for measuring the surface quality of polished silicon slices by visual inspection