GB/T 14863-2013
Method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes (English Version)
- Standard No.
- GB/T 14863-2013
- Language
- Chinese, Available in English version
- Release Date
- 2013
- Published By
- General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
- Status
- 2017-12
- Latest
- GB/T 14863-2013
- Replace
- GB/T 14863-1993
- Scope
- This standard specifies the test method for determining the net carrier concentration in silicon epitaxial layers using the voltage-capacitance relationship of gated and non-gated diodes. This standard applies to the measurement of the net carrier concentration of n-type or p-type epitaxial layers on substrates of the same or opposite conductivity type with an epitaxial layer thickness not less than a certain minimum thickness value (see Appendix A). This standard is also applicable to the measurement of the net carrier concentration of silicon polished wafers.
GB/T 14863-2013 Referenced Document
- GB/T 14141 Test method for sheet resistance of silicon epitaxial,diffused and ion-implanted layers using a collinear four-probe array
- GB/T 14146 Test method for carrier concentration of silicon epitaxial layers—Capacitance-voltage method*， 2021-05-21 Update
- GB/T 14847 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance
GB/T 14863-2013 history
- 2013 GB/T 14863-2013 Method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes
- 1993 GB/T 14863-1993 Standard test method for net carrier density in silicon eqitaxial layers by voltage-capacitance of gated and ungated diodes
