GB/T 14863-1993
Standard test method for net carrier density in silicon eqitaxial layers by voltage-capacitance of gated and ungated diodes (English Version)
- Standard No.
- GB/T 14863-1993
- Language
- Chinese, Available in English version
- Release Date
- 1993
- Published By
- General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
- Status
- 2014-08
- Replace By
- GB/T 14863-2013
- Latest
- GB/T 14863-2013
- Scope
- This standard specifies the principle, instruments and materials, sample preparation, measurement procedures and data processing for determining the net current-carrying concentration in the silicon epitaxial layer using the voltage-capacitance relationship of gated and non-gated diodes. This standard applies to n-type or p-type epitaxial layers on substrates of the same or opposite conductivity type whose epitaxial layer thickness is not less than a certain minimum thickness value (see Appendix B), and also applies to bulk materials.
GB/T 14863-1993 history
- 2013 GB/T 14863-2013 Method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes
- 1993 GB/T 14863-1993 Standard test method for net carrier density in silicon eqitaxial layers by voltage-capacitance of gated and ungated diodes
