GB/T 14141-2009 (English Version) PDF

Standard No.: GB/T 14141-2009
Language: Chinese, Available in English version
Release Date: 2009
Published By: General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
Latest: GB/T 14141-2009
Replace: GB/T 14141-1993

Scope: This standard specifies the method for measuring the sheet resistance of silicon epitaxial layer, diffusion layer and ion implantation layer with in-line four probes. This standard is applicable to the measurement of the average sheet resistance of a thin layer formed on or under the surface of a silicon wafer by epitaxy, diffusion, or ion implantation with a diameter greater than 15.9 mm. The conductivity type of the silicon substrate is opposite to that of the thin layer to be measured. It is suitable for measuring thin layers with a thickness not less than 0.2μm, and the measurement range of sheet resistance is 10Ω～5000Ω. This method can also be adapted for higher or lower value sheet resistance measurements, but its measurement accuracy has not been evaluated.

GB/T 14141-2009 Referenced Document

GB/T 11073-2007 Standard method for measuring radial resistivity variation on silicon slices
GB/T 1552-1995 Test method for measuring resistivity of monocrystal silicon and germanium with a collinear four-probe array

2009 GB/T 14141-2009 Test method for sheet resistance of silicon epitaxial,diffused and ion-implanted layers using a collinear four-probe array
1993 GB/T 14141-1993 Test method for sheet resistance of silicon epitaxial, diffused and ion-implanted layers using a collinear four-probe array