YS/T 1061-2015 (English Version) PDF

Scope: This standard specifies the requirements, inspection methods, inspection rules, marking, packaging, transportation, storage, quality certificate and order form (or contract) content for polycrystalline silicon cores produced by the modified Siemens method. This standard applies to polycrystalline silicon as raw material, silicon rods produced by the Czochralski method (CZ) and then processed by wire cutting or drawn by the pedestal method.

YS/T 1061-2015 Referenced Document

GB/T 11336 Measurement of departures from straightness
GB/T 14264 Semiconductor materials-Terms and definitions
GB/T 1550 Test methods for conductivity type of extrinsic semiconducting materials*， 2018-12-28 Update
GB/T 1551 Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method*， 2021-05-21 Update
GB/T 1558 Infrared absorption test method for substituted carbon content in silicon*， 2023-12-28 Update
GB/T 24582 Determination of metal impurity content on polysilicon surface by acid leaching-inductively coupled plasma mass spectrometry*， 2023-08-06 Update
GB/T 2828.1 Inspection procedure by count sampling part 1: Lot by lot inspection sampling plan retrieved by acceptance quality limit (AQL)
GB/T 29849 Test method for measuring surface metallic contamination of silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometry