GB/T 29849-2013 Test method for measuring surface metallic contamination of silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometry (English Version)
General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
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GB/T 29849-2013
Scope
This standard specifies the method for the determination of trace metal impurities on the surface of silicon materials for photovoltaic cells using inductively coupled plasma mass spectrometry (ICP-MS). This standard applies to the determination of trace metal impurities sodium, magnesium, aluminum, potassium, calcium, titanium, chromium, iron, nickel, copper, zinc and molybdenum on the surface of silicon materials for photovoltaic cells. The measuring range of each element is shown in Table 1.
GB/T 29849-2013 Referenced Document
GB/T 25915.1-2010 Cleanrooms and associated controlled environments.Part 1:Classification of air cleanliness
GB/T 29849-2013 history
2013GB/T 29849-2013 Test method for measuring surface metallic contamination of silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometry