GB/T 29849-2013
Test method for measuring surface metallic contamination of silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometry (English Version)

Standard No.
GB/T 29849-2013
Language
Chinese, Available in English version
Release Date
2013
Published By
General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
Latest
GB/T 29849-2013
Scope
This standard specifies the method for the determination of trace metal impurities on the surface of silicon materials for photovoltaic cells using inductively coupled plasma mass spectrometry (ICP-MS). This standard applies to the determination of trace metal impurities sodium, magnesium, aluminum, potassium, calcium, titanium, chromium, iron, nickel, copper, zinc and molybdenum on the surface of silicon materials for photovoltaic cells. The measuring range of each element is shown in Table 1.

GB/T 29849-2013 Referenced Document

  • GB/T 25915.1-2010 Cleanrooms and associated controlled environments.Part 1:Classification of air cleanliness

GB/T 29849-2013 history

  • 2013 GB/T 29849-2013 Test method for measuring surface metallic contamination of silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometry
Test method for measuring surface metallic contamination of silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometry



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