GB/T 25076-2010 (English Version) PDF

Standard No.: GB/T 25076-2010
Language: Chinese, Available in English version
Release Date: 2010
Published By: General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
Status: Be replaced 2019-06
Replace By: GB/T 25076-2018
Latest: GB/T 25076-2018

Scope: This standard specifies the technical requirements, test methods, inspection rules and marking, packaging, transportation and storage of silicon single crystals for solar cells. This standard applies to silicon single crystals for ground-space solar cells prepared by Czochralski doping.

GB/T 25076-2010 Referenced Document

GB/T 11073 Standard method for measuring radial resistivity variation on silicon slices
GB/T 14140 Test method for measuring diameter of semiconductor wafer
GB/T 14264 Semiconductor materials-Terms and definitions
GB/T 1550 Test methods for conductivity type of extrinsic semiconducting materials*， 2018-12-28 Update
GB/T 1552 Test method for measuring resistivity of monocrystal silicon and germanium with a collinear four-probe array
GB/T 1553 Determination of Minority Carrier Lifetime in Silicon and Germanium by Photoconductivity Decay Method*， 2023-08-06 Update
GB/T 1554 Testing method for crystallographic perfection of silicon by preferential etch techniques
GB/T 1555 Method for Determination of Crystalline Orientation of Semiconductor Single Crystal*， 2023-08-06 Update
GB/T 1557 Test method for determining interstitial oxygen content in silicon by infrared absorption*， 2018-09-17 Update
GB/T 1558 Infrared absorption test method for substituted carbon content in silicon*， 2023-12-28 Update
GB/T 6616 Non-contact eddy current method for testing semiconductor wafer resistivity and semiconductor film sheet resistance*， 2023-08-06 Update