GB/T 24581-2009 (English Version) PDF

Standard No.: GB/T 24581-2009
Language: Chinese, Available in English version
Release Date: 2009
Published By: General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
Status: Be replaced 2022-10
Replace By: GB/T 24581-2022
Latest: GB/T 24581-2022

Scope: This standard is applicable to the detection of the electroactive elements boron (B), phosphorus (P), arsenic (As), aluminum (Al), antimony (Sb) and gallium (Ga) in single silicon products. The concentration range of each electroactive element impurity or dopant in silicon to which this standard applies is (0.01×10～5.0×1O)a. The concentration of each impurity or dopant can be obtained from Beer's law and a calibration factor is given for each element.

GB/T 24581-2009 Referenced Document

ASTM E131 Standard Definitions of Terms and Symbols Relating to Molecular Spectroscopy
ASTM E168 Standard Practices for General Techniques of Infrared Quantitative Analysis
ASTM E177 Standard Practice for Use of the Terms Precision and Bias in ASTM Test Methods
ASTM E275 Standard Practice for Describing and Measuring Performance of Ultraviolet, Visible, and Near-Infrared Spectrophotometers
GB/T 13389 Practice for conversion between resistivity and dopant density for boron-doped, phosphorus-doped, and arsenic-doped silicon*， 2014-12-31 Update
GB/T 14264 Semiconductor materials-Terms and definitions
GB/T 1558 Infrared absorption test method for substituted carbon content in silicon*， 2023-12-28 Update
GB/T 6618 Test method for thickness and total thickness variation of silicon slices

2022 GB/T 24581-2022 Test method for Ⅲ and Ⅴ impurities content in single crystal silicon—Low temperature FT-IR analysis method
2009 GB/T 24581-2009 Test method for low temperature FT-IR analysis of single crystal silicon for Ⅲ-Ⅴ impurities