GB/T 6617-2009 (English Version) PDF

Standard No.: GB/T 6617-2009
Language: Chinese, Available in English version
Release Date: 2009
Published By: General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
Latest: GB/T 6617-2009
Replace: GB/T 6617-1995

Scope: This standard specifies the method for measuring the resistivity of silicon wafers with spreading resistance probes. This standard is suitable for measuring the resistivity of silicon wafers with known crystal orientation and conductivity type and measuring the resistivity of the epitaxial layer of silicon wafers with the same type or inverse type of substrate. Measuring range: 10^-3Ω·cm～ 10² Ω·cm.

GB/T 6617-2009 Referenced Document

GB/T 14847 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance*， 2011-01-10 Update
GB/T 1550 Test methods for conductivity type of extrinsic semiconducting materials*， 2018-12-28 Update
GB/T 1552 Test method for measuring resistivity of monocrystal silicon and germanium with a collinear four-probe array
GB/T 1555 Method for Determination of Crystalline Orientation of Semiconductor Single Crystal*， 2023-08-06 Update

2009 GB/T 6617-2009 Test method for measuring resistivity of silicon wafer using spreading resistance probe
1995 GB/T 6617-1995 Test method for measuring resistivity of silicon wafers using spreading resistance probe