GB/T 6617-1995
Test method for measuring resistivity of silicon wafers using spreading resistance probe (English Version)

Standard No.

GB/T 6617-1995

Language

Chinese, Available in English version

Release Date

1995

Published By

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China

Status

Be replaced 2010-06

Replace By

GB/T 6617-2009

Latest

GB/T 6617-2009

Scope

This standard specifies the method for measuring the resistivity of silicon wafers with spreading resistance probes. This standard is suitable for measuring the resistivity of silicon wafers with known crystal orientation and conductivity type and measuring the resistivity of silicon epitaxial layers of the same type or opposite type as the substrate. Measuring range: 10^-3～10²Ω·cm.

GB/T 6617-1995 history

• 2009 GB/T 6617-2009 Test method for measuring resistivity of silicon wafer using spreading resistance probe
• 1995 GB/T 6617-1995 Test method for measuring resistivity of silicon wafers using spreading resistance probe