GB/T 6616-2009
Test methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gauge (English Version)
- Standard No.
- GB/T 6616-2009
- Language
- Chinese, Available in English version
- Release Date
- 2009
- Published By
- General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
- Status
- 2024-03
- Replace By
- GB/T 6616-2023
- Latest
- GB/T 6616-2023
- Replace
- GB/T 6616-1995
- Scope
- This standard specifies the method for measuring the resistivity of semiconductor silicon wafers and the sheet resistance of thin films by non-contact eddy current. This standard is applicable to the measurement of the resistivity of silicon single crystal cutting, grinding and polishing slices with a diameter or side length greater than 25mm and a thickness of 0.1mm-1mm, and the sheet resistance of silicon thin films. When measuring thin-film sheet resistance, the effective sheet resistance of the substrate should be at least 1000 times the sheet resistance of the thin film. The measurement ranges of silicon wafer resistivity and film sheet resistance are 1.0*10-3Ω•cm-2*102Ω•cm and 2*103Ω/□~ 3*103Ω/□.
GB/T 6616-2009 Referenced Document
- ASTM E691 Standard Practice for Conducting an Interlaboratory Study to Determine the Precision of a Test Method
- GB/T 1552 Test method for measuring resistivity of monocrystal silicon and germanium with a collinear four-probe array
GB/T 6616-2009 history
- 2023 GB/T 6616-2023 Non-contact eddy current method for testing semiconductor wafer resistivity and semiconductor film sheet resistance
- 2009 GB/T 6616-2009 Test methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gauge
- 1995 GB/T 6616-1995 Test method for measuring resistivity of semiconductor silicon or sheet resistance of semiconductor films with a noncontact eddy-current gage
