GB/T 6616-1995
Test method for measuring resistivity of semiconductor silicon or sheet resistance of semiconductor films with a noncontact eddy-current gage (English Version)
- Standard No.
- GB/T 6616-1995
- Language
- Chinese, Available in English version
- Release Date
- 1995
- Published By
- General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
- Status
- 2010-06
- Replace By
- GB/T 6616-2009
- Latest
- GB/T 6616-2023
- Scope
- This standard specifies the non-contact eddy current measurement method for the bulk resistivity of silicon wafers and the sheet resistance of silicon thin films. This standard is applicable to the measurement of the resistivity and the sheet resistance of silicon thin films of silicon single crystal cutting, grinding and polishing wafers (silicon wafers for short) with a diameter or side length greater than 30 mm and a thickness of 0.1 to 1 mm. When measuring thin-film sheet resistance, the effective sheet resistance of the substrate should be at least 1000 times the sheet resistance of the thin film. The measurement ranges of silicon wafer bulk resistivity and silicon film sheet resistance are 1.0×10-3～2×102Ω cm and 2～3×103π/□ .
GB/T 6616-1995 history
- 2023 GB/T 6616-2023 Non-contact eddy current method for testing semiconductor wafer resistivity and semiconductor film sheet resistance
- 2009 GB/T 6616-2009 Test methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gauge
- 1995 GB/T 6616-1995 Test method for measuring resistivity of semiconductor silicon or sheet resistance of semiconductor films with a noncontact eddy-current gage
