GB/T 1551-2009
Test method for measuring resistivity of monocrystal silicom (English Version)

Standard No.

GB/T 1551-2009

Language

Chinese, Available in English version

Release Date

2009

Published By

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China

Status

Be replaced 2021-12

Replace By

GB/T 1551-2021

Latest

GB/T 1551-2021

Replace

GB/T 1551-1995 GB/T 1552-1995

Scope

This method specifies a method for measuring the resistivity of silicon single crystals by the in-line four-probe method. This method is suitable for measuring the thickness of the sample and the shortest distance from the edge of the sample to any probe end point, both of which are greater than 4 times the probe spacing for silicon single crystal resistivity, and the measurement diameter is greater than 10 times the probe spacing, Resistivity of a single wafer with a thickness less than 4 times the probe pitch. The silicon single crystal resistivity range that can be determined by the method is 1×10Ω•cm～3×10Ω•cm.

GB/T 1551-2009 history

• 2021 GB/T 1551-2021 Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method
• 2009 GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicom
• 1995 GB/T 1551-1995 Test method for resistivity of silicon and germanium bars using a two-point probe

GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicom has been changed from GB/T 1552-1995 Test method for measuring resistivity of monocrystal silicon and germanium with a collinear four-probe array.