GB/T 1551-1995
Test method for resistivity of silicon and germanium bars using a two-point probe (English Version)
- Standard No.
- GB/T 1551-1995
- Language
- Chinese, Available in English version
- Release Date
- 1995
- Published By
- General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
- Status
- 2010-06
- Replace By
- GB/T 1551-2009
- Latest
- GB/T 1551-2021
- Scope
- This standard specifies the method for measuring the resistivity of silicon and germanium single crystal ingots with two DC probes. This standard is suitable for measuring the resistivity of circular, square or rectangular single crystal ingots with uniform cross-sectional area. Measuring range: 10-3～104Ω·cm for silicon single crystal, 5×10-4～102Ω·cm for germanium single crystal. The ratio of the length of the sample to the maximum dimension of the section should not be less than 3:1
GB/T 1551-1995 history
- 2021 GB/T 1551-2021 Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method
- 2009 GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicom
- 1995 GB/T 1551-1995 Test method for resistivity of silicon and germanium bars using a two-point probe
