This document describes a method for testing the warpage and curvature of silicon wafers using two probes for automatic non-contact scanning of the wafer surface. This document applies to clean and dry silicon wafers with a diameter of not less than 50 mm and a thickness of not less than 100 μm, including silicon wafers that are cut, ground, etched, polished, epitaxy, etched, or with other surface states. It can also be used for gallium arsenide, Warpage and curvature testing of silicon carbide, sapphire and other semiconductor wafers.
GB/T 32280-2022 Referenced Document
GB/T 14264 Semiconductor materials-Terms and definitions
GB/T 16596 Specification for establishing a wafer coordinate system