This standard specifies the non-destructive, automatic non-contact scanning test method for warpage of silicon wafers. This standard applies to the warpage test of clean and dry cut, ground, corroded, polished, etched, epitaxial or other surface state silicon wafers with a diameter not less than 50 mm and a thickness not less than 100 μm. The method can be used for monitoring the warpage of silicon wafers caused by thermal effects and (or) mechanical effects, and can also be used for warpage testing of other semiconductor wafers such as gallium arsenide and sapphire.