DIN EN 15991:2016
Testing of ceramic and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by inductively coupled plasma optical emission spectrometry (ICP OES) with electrothermal vaporisation (ETV); German v

Standard No.

DIN EN 15991:2016

Release Date

2016

Published By

German Institute for Standardization

Status

Be replaced

Replace By

DIN EN 15991:2016-02

Latest

DIN EN 15991:2016-02

Replace

DIN EN 15991:2011 DIN EN 15991:2014

DIN EN 15991:2016 Referenced Document

• DIN ISO 5725-2:2002 Accuracy (trueness and precision) of measurement methods and results - Part 2: Basic method for the determination of repeatability and reproducibility of a standard measurement method (ISO 5725-2:1994 including Technical Corrigendum 1:2002)
• DIN ISO 5725-4:2003 Accuracy (trueness and precision) of measurement methods and results - Part 4: Basic methods for the determination of the trueness of a standard measurement method (ISO 5725-4:1994)
• EN ISO 21068-1:2008 Chemical analysis of silicon-carbide-containing raw materials and refractory products - Part 1: General information and sample preparation (ISO 21068-1:2008)
• ISO 5022:1979 Shaped refractory products; Sampling and acceptance testing
• ISO 5725-2:1994 Accuracy (trueness and precision) of measurement methods and results - Part 2: Basic method for the determination of repeatability and reproducibility of a standard measurement method
• ISO 5725-4:1994 Accuracy (trueness and precision) of measurement methods and results - Part 4: Basic methods for the determination of the trueness of a standard measurement method
• ISO 8656-1:1988 Refractory products; sampling of raw materials and unshaped products; part 1: sampling scheme
• ISO/IEC Guide 98-3:2008 Uncertainty of measurement — Part 3: Guide to the expression of uncertainty in measurement (GUM:1995)

DIN EN 15991:2016 history

• 2016 DIN EN 15991:2016-02 Testing of ceramic and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by inductively coupled plasma optical emission spectrometry (ICP OES) with electrothermal vaporisation (ETV); Germa...
• 2016 DIN EN 15991:2016 Testing of ceramic and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by inductively coupled plasma optical emission spectrometry (ICP OES) with electrothermal vaporisation (ETV); German v
• 2011 DIN EN 15991:2011 Testing of ceramic and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by inductively coupled plasma optical emission spectrometry (ICP OES) with electrothermal vaporisation (ETV); German v
• 2008 DIN 51096:2008 Testing of ceramic raw and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by inductively coupled plasma optical emission spectrometry (ICP OES) and electrothermal vaporisation (ETV)