DIN EN 15991:2011
Testing of ceramic and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by inductively coupled plasma optical emission spectrometry (ICP OES) with electrothermal vaporisation (ETV); German v

Standard No.
DIN EN 15991:2011
Release Date
2011
Published By
German Institute for Standardization
Status
Replace By
DIN EN 15991:2016
DIN EN 15991 E:2014
Latest
DIN EN 15991:2016-02
Scope
This European Standard defines a method for the determination of the trace element concentrations of Al, Ca, Cr, Cu, Fe, Mg, Ni, Ti, V and Zr in powdered and granular silicon carbide. Dependent on element, wavelength, plasma conditions and weight, this test method is applicable for mass contents of the above trace contaminations from about 0,1 mg/kg to about 1000 mg/kg, after evaluation also from 0,001 mg/kg to about 5000 mg/kg.

DIN EN 15991:2011 history

  • 2016 DIN EN 15991:2016-02 Testing of ceramic and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by inductively coupled plasma optical emission spectrometry (ICP OES) with electrothermal vaporisation (ETV); Germa...
  • 2016 DIN EN 15991:2016 Testing of ceramic and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by inductively coupled plasma optical emission spectrometry (ICP OES) with electrothermal vaporisation (ETV); German v
  • 2011 DIN EN 15991:2011 Testing of ceramic and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by inductively coupled plasma optical emission spectrometry (ICP OES) with electrothermal vaporisation (ETV); German v
  • 2008 DIN 51096:2008 Testing of ceramic raw and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by inductively coupled plasma optical emission spectrometry (ICP OES) and electrothermal vaporisation (ETV)
Testing of ceramic and basic materials - Direct determination of mass fractions of impurities in powders and granules of silicon carbide by inductively coupled plasma optical emission spectrometry (ICP OES) with electrothermal vaporisation (ETV); German v



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